STN1NB80 n - channel 800v - 16 w - 0.2a - sot-223 powermesh ? mosfet n typical r ds(on) =16 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized description using the latest high voltage mesh overlay ? process, stmicroelectronics has designed an advanced family of power mosfets with outstanding performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest r ds(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. applications n switch mode power supplies (smps) n ac adaptors and battery chargers for handheld equipment internal schematic diagram november 1999 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 800 v v dgr drain- gate voltage (r gs =20k w ) 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c0.2a i d drain current (continuous) at t c =100 o c0.12a i dm ( ? ) drain current (pulsed) 0.8 a p tot total dissipation at t c =25 o c2.9w derating factor 0.02 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 4 v/ns t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 0.2 a, di/dt 200 a/ m s, v dd v (br)dss ,tj t jmax type v dss r ds(on) i d STN1NB80 800 v < 20 w 0.2 a sot-223 ? 1 2 2 3
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 43 60 0.7 260 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 0.2 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =50v) 200 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 800 v i dss zero g ate voltage drain current (v gs =0) v ds =maxrating v ds = max rating t c =125 o c 1 50 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 345v r ds(on) static drain-source on resistance v gs =10v i d =0.2 a 16 20 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 0.2 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =0.2a 0.1 0.4 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs =0 140 22 2.5 pf pf pf STN1NB80 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 400 v i d =0.5a r g =4.7 w v gs =10v (see test circuit, figure 3) 8 10 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v i d =1.1 a v gs =10v 10 5 3.6 14 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 640 v i d =1.1 a r g =4.7 w v gs =10v (see test circuit, figure 5) 40 16 50 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 0.2 0.8 a a v sd ( * ) forward on voltage i sd =0.2 a v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =1.1a di/dt=100a/ m s v dd = 100 v t j =150 o c (see test circuit, figure 5) 460 1150 5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance STN1NB80 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STN1NB80 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STN1NB80 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STN1NB80 6/8
dim. mm mils min. typ. max. min. typ. max. a 2.27 2.3 2.33 89.4 90.6 91.7 b 4.57 4.6 4.63 179.9 181.1 182.3 c 0.2 0.4 0.6 7.9 15.7 23.6 d 0.63 0.65 0.67 24.8 25.6 26.4 e1 1.5 1.6 1.7 59.1 63 66.9 e4 0.32 12.6 f 2.9 3 3.1 114.2 118.1 122.1 g 0.67 0.7 0.73 26.4 27.6 28.7 l1 6.7 7 7.3 263.8 275.6 287.4 l2 3.5 3.5 3.7 137.8 137.8 145.7 l 6.3 6.5 6.7 248 255.9 263.8 c c b e l a b e1 l1 f g c d l2 e4 p008b sot-223 mechanical data STN1NB80 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectro nics. specific ation mentioned in this publication are subjec t to change without notice. this publication supersedes and replaces all informat ion previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com . STN1NB80 8/8
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